Gang JI
,
Shishen YAN
,
Yanxue CHEN
,
Qiang CAO
,
Wei XIA
,
Yihua LIU
,
Liangmo MEI
,
Ze ZHANG
,
null
材料科学技术（英）
2×(FeNi/CoZnO)/ZnO/(CoZnO/Co) ×2 spin-injection devices were prepared by sputtering and photo-lithography. In the devices, two composite magnetic layers 2×(FeNi/CoZnO) and (CoZnO/Co) ×2 with different coercivities were used to fabricate the ZnO-based semiconductor spin valve. Since the CoZnO ferromagnetic semiconductor layers touched the ZnO space layer directly, the significant spin injection from CoZnO into ZnO was observed by measuring the magnetoresistance of the spin-injection devices. The magnetoresistance reduced linearly with increasing temperature, from 1.12% at 90 K to 0.35% at room temperature.
关键词:
Spin injection
,
磁电阻
,
铁磁性半导体
Baoxin HUANG
,
Yihua LIU
,
Ruzhen ZHANG
,
Chengjian WANG
,
Gang JI
,
Liangmo MEI
材料科学技术（英）
The Gd substituting effects for La in La0.67Ca0.33MnO3 has been studied. With increasing the substituting amount of Gd, the phase transition temperature of metal-isolator for the samples decreases, the corresponding peak resistivity increases,the Curie temperature decreases monotonically. The substitution of La-Ca-Mn-O with 11% Gd for La improved the magnetoresistance ratio by an order of magnitude. The effects of substituting Gd can be explained in terms of the lattice effects. An irreversible MR behaviour was observed in Gd-substituting compounds. This effect became marked when the substituting amount of Gd was greater than 7%. A maximum irreversible increment of MR ratio as large as 91% was obtained when Gd substituting amount was 11%.
关键词:
Manganese perovskites
,
null
,
null
,
null
Ruwei GAO
,
Yihua LIU
,
Shishen YAN Deheng ZHANG and Lin ZHANG(Dept. of Physics
,
Shandong University
,
Jinan 250100
,
China)
材料科学技术（英）
Magnetism and its dependence on annealing temperature for r.f. sputtered Co/Cu multilayers have been investigated. It was found that the easy magnetization axes of the films are paralIel to the substrate and the magnetic properties of both as-sputtered and annealed multilayers are isotropic in the film plane. The coercive field Hc is 4.8 kA/m and the ratio of remanence-tosaturation magnetization Mi/M is about 0.73 for as-sputtered samples. Both Hc and Mr/Ms increase with increasing annealing temperatures, especially when annealing temperatures are higher than 400℃. These experimental results can be interpreted using the ferromagnetic exchange coupling and the pinning theory of the coercivity
关键词:
